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2N7002KB Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD.

Part # 2N7002KB
Description  Main Product Characteristics
PDF  7 Pages
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Manufacturer  SILIKRON [Silikron Semiconductor Co.,LTD.]
Direct Link  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

2N7002KB Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD.

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2N7002KB
©Silikron Semiconductor CO., LTD.
2012.04.20
Version: 1.0
page 2 of 7
www.silikron.com
Electrical Characterizes @T
A=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS
Drain-to-Source breakdown voltage
60
—
—
V
VGS = 0V, ID = 250μA
RDS(on)
Static Drain-to-Source on-resistance
—
1.5
2
Ω
VGS=10V, ID=0.5A
—
—
3
VGS=5V, ID=0.05A
VGS(th)
Gate threshold voltage
1
—
2.5
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
μA
VDS = 60V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
±100
nA
VGS=±5V,VDS=0V
—
—
±10
uA
VGS=±20V,VDS=0V
td(on)
Turn-on delay time
—
—
25
ns
VGS=10V, VDS=30V,
ID=0.2A,RGEN=10Ω
td(off)
Turn-Off delay time
—
—
35
Ciss
Input capacitance
—
40
—
pF
VGS = 0V
VDS = 25V
ƒ = 1MHz
Coss
Output capacitance
—
16.6
—
Crss
Reverse transfer capacitance
—
9.5
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
(Body Diode)
—
—
0.3
A
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
—
—
1.2
A
V
SD
Diode Forward Voltage
—
—
1.3
V
IS=0.2A, VGS=0V



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