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ATF13786 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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ATF13786 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
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1 / 3 page  5-43 ATF-13786 Surface Mount Gallium Arsenide FET for Oscillators Technical Data 85 mil Plastic Surface MountPackage Features • Low Cost Surface Mount Plastic Package • High f MAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 dBm • Tape-and-Reel Packaging Option Available Description Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs. These features make this device particularly well suited for low power (< +10 dBm) commercial oscillator applications such as are encountered in DBS, TVRO, and MMDS television receivers, or hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7 GHz ISM bands. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 40 mA. PinConfiguration 510 20 1 5 10 15 20 FREQUENCY (GHz) S 21 25 MSG MSG 0 MAG This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 1 4 3 2 SOURCE SOURCE DRAIN GATE 5965-8721E |
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