5-44

[4]

(unless noted)

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

|S

2

Insertion Power Gain

f = 10 GHz

dB

6.0

P

1 dB

Power at 1 dB Gain Compression

f = 10 GHz

dBm

15

16.5

G

1 dB

1 dB Compressed Gain

f = 10 GHz

dB

6.5

7.5

PN

f = 10 GHz

dBc/Hz

-110

g

m

Transconductance

V

mS

25

55

Saturated Drain Current

mA

50

70

100

V

P

Pinchoff Voltage

V

V

-2.0

-1.5

-0.5

V

BDG

Gate - Drain Breakdown Voltage

I

V

6.5

7

Notes:

4. Recommended maximum bias conditions for use as an oscillator.

5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.

Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.

ATF-13786 Absolute Maximum Ratings

Symbol

Parameter

Units

V

DS

Drain-Source Voltage

V

4

V

GS

Gate-Source Voltage

V

-4

Gate-Drain Voltage

V

-6

I

DS

Drain Current

mA

I

DSS

P

T

mW

225

T

CH

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

-65to+150

Notes:

1. Operation of this device above

any one of these conditions

may cause permanent damage.

to be the temperature at the

ends of pins 2 and 4 where

they contact the circuit

board).

θ