MS6N80 datasheet(3/8 Pages) BWTECH

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MS6N80

800V N-Channel MOSFET

Publication Order Number: [MS6N80]

Switching Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Time

VDS = 400 V, ID = 6 A,

RG = 25 Ω

Turn-On Rise Time

120

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS = 640 V,ID = 6 A,

VGS = 7 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Source-Drain Diode Maximum Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source-Drain Diode Forward Current

ISM

ISM Pulsed Source-Drain Diode Forward Current

VSD

Source-Drain Diode Forward Voltage

IS = 6 A , VGS = 0 V

1.4

trr

Reverse Recovery Time

IS = 6 A , VGS = 0 V

diF/dt =

100A/μs

650

Qrr

Reverse Recovery Charge

μC

Notes:

1. Repeativity rating : pulse width limited by junction temperature

2. L = 34.0mH, IAS =6.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C

3. ISD ≤ 6.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

MS6N80 Datasheet(PDF) 3 Page - Bruckewell Technology LTD

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