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W9812G2KB Datasheet(PDF) 3 Page - Winbond |
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W9812G2KB Datasheet(HTML) 3 Page - Winbond |
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3 / 43 page ![]() W9812G2KB Publication Release Date: Jun. 20, 2014 - 3 - Revision: A01 1. GENERAL DESCRIPTION W9812G2KB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words 4 banks 32 bits. W9812G2KB delivers a data bandwidth of up to 166M words per second. To fully comply with the personal computer industrial standard, W9812G2KB is sorted into two grade parts: -6 and -6I. The -6 and-6I grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade which is guaranteed to support -40°C ≤ TA ≤ 85°C). Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9812G2KB is ideal for main memory in high performance applications. 2. FEATURES 3.3V ± 0.3V power supply 1,048,576 words 4 banks 32 bits organization Self Refresh Current: Standard and Low Power CAS Latency: 2 & 3 Burst Length: 1, 2, 4, 8 and full page Sequential and Interleave Burst Byte data controlled by DQM0-3 Auto-precharge and controlled precharge Burst read, single write operation 4K refresh cycles/64mS Interface: LVTTL Packaged in TFBGA 90 Ball (8 x13 mm2), using Lead free materials with RoHS compliant Dual-Die-Package (DDP), two pieces of 64M bits chip sealed in one package |
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