RFD16N06LE datasheet(2/7 Pages) INTERSIL

2 / 7 page

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD16N06LE, RFD16N06LESM

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

+10, -8

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.606

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V, Figure 11

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA, Figure 10

Zero Gate Voltage Drain Current

IDSS

VDS = 55V, VGS = 0V

µA

VDS = 50V, VGS = 0V, TC = 150

250

µA

Gate to Source Leakage Current

IGSS

VGS = +10, -8V

µA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 16A, VGS = 5V

0.047

Ω

Turn-On Time

tON

VDD = 30V, ID = 16A, RL = 1.88Ω,

VGS = 5V, RGS = 5Ω

Figures 16, 17

100

Turn-On Delay Time

td(ON)

-11-

Rise Time

-60-

Turn-Off Delay Time

td(OFF)

-48-

Fall Time

-35-

Turn-Off Time

tOFF

115

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 48V,

ID = 16A, RL = 3Ω

Figures 18, 19

-51

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

1.8

2.6

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

Figure 12

1350

Output Capacitance

COSS

300

Reverse Transfer Capacitance

CRSS

-90-

Thermal Resistance Junction to Case

RθJC

1.65

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251AA, TO-252AA

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 16A

1.5

Diode Reverse Recovery Time

trr

ISD = 16A, dISD/dt = 100A/µs

125

NOTES:

2. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.

RFD16N06LE, RFD16N06LESM

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