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NE5820M53 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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NE5820M53 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page ![]() R09DS0005EJ0200 Rev.2.00 Page 1 of 6 May 20, 2011 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. PreliminaryData Sheet NE5820M53 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone. The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting. FEATURES • Low noise : NV = −114 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 15 kΩ • Low input capacitance : Ciss = 1.5 pF TYP. @VDD = 2.0 V, RL = 15 k Ω • Low consumption current : IDD = 85 μATYP. @VDD = 2.0 V, RL = 15 kΩ • High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) • Built-in the capacitor for RF noise immunity • High ESD voltage APPLICATIONS • Microphone, Sensor etc. ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE5820M53-T1 NE5820M53-T1-A 3-pin thin-type lead-less minimold (Pb-Free) 10 kpcs/reel B8 • Embossed tape 8 mm wide • Pin 3 face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5820M53 CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0005EJ0200 Rev.2.00 May 20, 2011 |
Similar Part No. - NE5820M53_15 |
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Similar Description - NE5820M53_15 |
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