| Electronic Components Datasheet Search |
|
AN2623 Datasheet(PDF) 9 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN2623 Datasheet(HTML) 9 Page - STMicroelectronics |
|
9 / 25 page ![]() AN2623 Design circuit 9/25 Equation 12 and for the free wheeling diode: Equation 13 Equation 14 In Equation 12, 13, and 14 the currents are calculated in Full Load condition considering the worst case for each diode and can be used to calculate the maximum power dissipation for each diode. To reduce the number of components, the size of the board, and to minimize power losses, the ST double fast recovery rectifier BYT16P-400 was selected. Although the two diodes inside the same package are always working complementarily, in order to choose the heat sink, the total power losses in the worst case can be calculated as if, instead of two diodes there is only one that flows through the whole current of the inductor: Equation 15 Considering TAmbMax = 70 °C, the power losses just calculated, and the maximum junction temperature TJmax (see diode datasheets) of the selected diode, it is possible to determine the total thermal resistance of the diode: Equation 16 The Rthmax that results is lower than the max junction to ambient thermal resistance RthJ-A max of the select diode, so a heat sink with thermal resistance RthSN≅ 13 °C must be added. 3.4 Power transformer design and MOSFET choice Ideally in a forward converter, the energy flows forward from the primary side to the secondary side without any storage in the transformer. But the real transformer does not have infinite magnetizing inductance, so during the on-time of the power MOSFET some energy is stored in the magnetic core. The proper magnetic core and the primary winding turn number have to be selected in order to avoid core saturation. The proper magnetic core and primary winding turn number must be selected taking into account that some energy is also dissipated in the magnetic core. I RMSdiodeR I out D max 1 1 12 ------ ∆I out I out ------------- ⎝⎠ ⎛⎞ 2 ⋅ + ⎝⎠ ⎛⎞ I RMSdiodeR 3.2 A = ⇒ ⋅⋅ = I AVGdiodeR I out D max 2.25 A = ⋅ = D min D max V dcmin V dcmax ------------------- 11.5 I RMSdiodeF I out 1D min – () 1 1 12 ------ ∆I out I out ------------- ⎝⎠ ⎛⎞ 2 ⋅ + ⎝⎠ ⎛⎞ 4.23A = ⋅⋅ = ⇒ = ⋅ = % I AVGdiodeF I out 1D min – () 3.825 A = ⋅ = P totDiode V t I out R + d I 2 out 1 1 12 ------ I out ∆ I out ------------ ⎝⎠ ⎛⎞ 2 ⋅ + ⎝⎠ ⎛⎞ 5.53 W = ⋅⋅ ⋅ = R thmax T jmax T AmbMax – P lossesR -------------------------------------------- 15 ° C = = /W |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |