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AN2252 Datasheet(PDF) 9 Page - STMicroelectronics

Part # AN2252
Description  The flyback converter is a popular choice in applications where the required power
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2252 Datasheet(HTML) 9 Page - STMicroelectronics

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AN2252
Application circuit description
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The VCC capacitors are charged during the start-up phase by the permanent current source
made up of resistors R1, R2 and R3. Thanks to the very low current consumption of L6565
during the start-up phase, the start-up current is in the order of hundreds of microamperes
which significantly reduces the power dissipated in the start-up resistors.
The complete demagnetization of the transformer core is detected by the auxiliary winding
voltage crossing zero. Resistor R6 delivers this information to the IC's internal zero crossing
detector through pin 5. Resistor R7 shifts the zero-crossing detector threshold towards a
value closer to zero for reliable zero crossing during converter start-up or under overload
conditions.
Capacitor C8 delays the power switch turn-on to the moment when the collector voltage
reaches a valley point. The primary current control circuit consists of current-sense resistors
R11, R12 and low-pass filter R9, C7 connected to the CS pin 4 of the control IC.
The primary power switch is the STC04IE170HV. It is an ESBT rated for a maximum current
of 5A and collector-to-source voltage of 1500V. The gate of the ESBT is driven directly by
the internal gate driver of U1 through pin 7. The ESBT also requires a bias current for the
base of the internal BJT. It is provided by current transformer T2 through the diode D7.
During the storage time, the collector current flows through the B-C junction for the time
required by the junction to recover from conduction. The collector current flows then through
capacitor C10 which stores the energy that will generate the initial base current spike
necessary for the next switching cycle. The value of this current spike is determined by the
voltage across capacitor C10 (which is limited by Zener diode D9), by resistor R10 and by
the resistance of the B-E junction of the internal BJT of the ESBT. Diode D6 and resistor R4
provide the bias current required to precharge C10 during the first switching cycle and
properly start the converter operation.
Since the current transformer operation may be affected by core saturation when the
voltsecond product exceeds the limit, a protection circuit consisting of R8, C9, D8 and Q2 is
inserted in the current-sense path. This circuit is a timer which watches the maximum ON
time. If the latter goes beyond a certain limit, the current-sense voltage is suddenly
increased to its maximum threshold, thus stopping the gate driver and turning off the ESBT
through the gate. Without this circuit, the current transformer core saturation would cause
the ESBT to be unsafely turned off whenever there is a lack of base current. This condition
may happen in case of an undervoltage at the input, for instance if a mains voltage drop
occurs or the power supply is unplugged. As a consequence, the ON-time would be
increased above the specified current transformer volt-second product limit.
Clamp circuit D10, D11, C3, R13 and R14 protects the ESBT switch from the voltage spikes
induced by the transformer leakage inductance.
The output voltage is controlled by an opto-isolated feedback loop consisting of U2, voltage
divider R18, R19, R20 and frequency response compensation components R17, C13 and
C14. Since most of the voltage stress was moved (by the increased flyback voltage provided
by an appropriate transformer's turns ratio) to the primary side, a 100V Schottky diode can
be used as a rectifier on the secondary side even if the nominal output voltage is 24V. This is
one of the advantages of using the quasi-resonant mode, which further helps decrease the
output rectifier loss and increases the overall converter power efficiency.
2.2.1
Bill of materials
The list of components required to build the demonstration board is shown in Table 2. Most
of the used active components are available from STMicroelectronics. Thanks to the
outstanding performance of the ESBT, the switch does not require any heat sink for this



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