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AN3161 Datasheet(PDF) 7 Page - STMicroelectronics |
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AN3161 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() AN3161 New advanced planar PT STGW35HF60WD Doc ID 17151 Rev 1 7/14 3 New advanced planar PT STGW35HF60WD 3.1 Notes on technology and VCE(sat) grouping An advanced PT IGBT has been introduced to enhance the previous 600 V, 35 A IGBT STGW35NC60WD, tailored for high-frequency applications. From a technology point of view, two main improvements have been implemented on this IGBT: 1. The innovative double-drift process which changed the doping profile 2. The advanced planar strip layout Both factors allow the reduction of the effective resistance in the drift (N ¯) region and significantly improve the dynamic performance, especially at high temperature. The changes performed on the horizontal and vertical structure and their effect on this IGBT are clearly shown in its datasheet: the new STGW35HF60WD shows a lower VCE(sat) typical value than the equivalent STGW35NC60WD, and its Eoff max value (at IC = 20 A, TJ = 125 °C) is guaranteed as per the datasheet. Tests performed on a significant number of STGW35HF60WD samples show that the static temperature coefficient (see Equation 2), changes in relation to the absolute VCE(sat) value, as shown in Figure 3. Equation 2 Figure 3. Static VCE(sat)(@20 A,15 V) derating for STGW35HF60WD Figure 3 also explains how the total VCE(sat) population has been split to guarantee well- balanced and reliable paralleling. The ∆ symbol beside group A, whose VCE(sat) values belong to the interval (1.68 V − 1.92 V [@20 A, 25 °C]), satisfies the equation: V CE sat () T J 25 °C = () V CE sat () TJ 125 °C = () – ⋅ V CE sat () TJ 125 °C = () ⁄ AM06442v1 VCE(sat) at 20 A, 25 °C VCE(sat) at 20 A, 125 °C 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 0 25 50 75 100 125 150 Tj (°C) Δ≈15.5% Δ≈14.3% Δ≈13% Δ≈ 6% "A" GROUP "B" GROUP "C" GROUP |
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