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AN439 Datasheet(PDF) 2 Page - STMicroelectronics |
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AN439 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() TRIAC turn-off description AN439 2/16 1 TRIAC turn-off description 1.1 Definition The TRIAC can be compared to two thyristors mounted in back-to-back and coupled with a control area which allows the triggering of this Alternating Current Switch with only one gate (see Figure 1). Looking at the TRIAC silicon structure (see Figure 2), it can be noted that the conduction areas, corresponding to these two thyristors, narrowly overlap each other on the control area. During the conduction time, a certain quantity of charge is injected into the structure. The biggest part of this charge disappears by recombination during the current decrease, while another part is extracted after the turn-off by the reverse recovery current. Nonetheless, an excess charge remains, particularly in the neighboring regions of the gate, which can induce the triggering of the other conduction area when the mains voltage is reapplied across the TRIAC. This is the problem of commutation. For a given structure at a determined junction temperature, the turn-off behavior depends on: 1. The quantity of charge which remains when the current drops to zero. The quantity of the charge is linked to the value of the current which was circulating in the TRIAC approximately 100 µs, about two or three times the minority carriers’ life time, before the turn-off. Thus, the parameter to consider is the slope of the decreasing current, called the turn-off dI/dt or dI/dtOFF. (see Figure 3) 2. The slope of the reapplied voltage during turn-off. This parameter is the commutation dV/dt, called the turn-off dV/dt or dV/dtOFF (see Figure 3). A capacitive current, proportional to the dV/dtOFF, flows into the structure, and therefore charges are injected and added to those coming from the previous conduction. Figure 1. Simplified equivalent schematic of TRIAC circuit Figure 2. Example of TRIAC silicon structure A1 I+ A2 G I- V T Gates Ctrl. N3 P2 N2 P1 N1 P2 N2 P1 N4 A2 A1 G I+ I- N4 Gates Ctrl |
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