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FS10ASJ-06F Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # FS10ASJ-06F
Description  High-Speed Switching Use Nch Power MOS FET
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FS10ASJ-06F Datasheet(HTML) 7 Page - Renesas Technology Corp

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FS10ASJ-06F
REJ03G0241-0200 Rev.2.00 Dec 19, 2008
Page 5 of 6
10–1
100
2
3
4
5
7
101
2
3
4
5
7
–50
0
50
100
150
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
VGS = 10V
ID = 5A
Pulse Test
VDS = 10V
ID = 1mA
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
10–4
101
7
5
3
2
100
7
5
3
2
5
3
27
5
3
27
5
3
27
5
3
27
100
10–3
10–2
10–1
10–1
Single Pulse
0.5
0.2
0.05
0.02
0.01
VGS = 0V
ID = 1mA
D = 1.0
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
RL
VDD
Vout
Monitor
RGEN
RGS
Transient Thermal Impedance Characteristics
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
PDM
tw
D =
T
tw
T
0.1



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