REJ03G0241-0200 Rev.2.00 Dec 19, 2008

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FS10ASJ-06F

High-Speed Switching Use

Nch Power MOS FET

REJ03G0241-0200

Rev.2.00

Dec 19, 2008

Features

• Drive voltage : 4 V

• V

• r

Ω

• I

• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns

Outline

1

1

3

3

2, 4

2

4

1. Gate

2. Drain

3. Source

4. Drain

RENESAS Package code: PRSS0004ZG-A

(Package name: MP-3A)

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

60

V

Gate-source voltage

±20

V

Drain current

10

A

Drain current (Pulsed)

40

A

Avalanche current (Pulsed)

10

A

L = 50

µH

Source current

10

A

Source current (Pulsed)

40

A

Maximum power dissipation

20

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Mass

—

0.32

g

Typical value