PM0051

Flash program memory and data EEPROM comparison

Doc ID 14614 Rev 3

25/27

4.6.2

IAP method

Refer to application note AN2737- Basic in-application programming example using the

5

Flash program memory and data EEPROM

comparison

Table 9 shows the comparison between STM8S and STM8A microcontroller devices.

Table 9.

Comparison between STM8S and STM8A devices

Feature

Low density STM8S

Medium density STM8S

and STM8A

High density

STM8S and

STM8A

Memory

Block size

64B

128B

128B

Page size

1 block (64B)

4 blocks (512B)

4 blocks (512B)

Flash program memory

Up to 8 KB

16 to 32 KB (STM8S)

8 to 32 KB (STM8A)

From 32 to 128 KB

Data EEPROM

Additional 640B located in the same memory

array as Flash program

Fixed size

1 KB (STM8S)

384B to 1 KB (STM8A)

located in separate memory

array

Fixed size

1 to 2 KB located in

separate memory

array

Fixed size

User boot code (UBC)

YES - size configurable by option byte

Bootloader

NO

YES

Option bytes

Programmable in ICP/SWIM, user/IAP

Stored twice (normal+complemented value)

2 memory dedicated option bytes (ROP, UBC)

Programmable in ICP/SWIM, user/IAP/ Bootloader

Stored twice (normal+complemented value)

2 memory dedicated option bytes (ROP, UBC)

Programming/erasing features

Read-while-write

(RWW)

YES

Block programming (fast

Word programming(2)

Byte programming(2)

Block Erase(2)(3)

YES

Flash control registers

FLASH_NCR2, FLASH_CR2 containing complementary values

1.

The read-while-write (RWW) feature is not available on the 4-8 Kbyte STM8S because data EEPROM and Flash program

memory are located in the same memory array.

2.

Block program/erase sequence must be executed from RAM.

3.

Any word in the block programmed to 0.