Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SDR3

___ ___

└

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

│

│

│

│

└

Package Type

___ = Axial

SMS = Surface Mount Square Tab

│

│

│

│

│

│

│

└

Family/Voltage

K = 800 V

M = 1000 V

N = 1200 V

SDR3KHF & SDR3KHFSMS

thru

SDR3NHF & SDR3NHFSMS

3 AMP

800 - 1200 V

35 nsec

Hyper Fast Rectifier

Features:

• Hyper Fast Recovery: 35 nsec maximum

• PIV to 1200 Volts

• Hermetically Sealed

• Void Free Construction

• For High Efficiency Applications

• Single Chip Construction

• Low Reverse Leakage

Maximum Ratings

Symbol

Value

Units

Peak Repetitive Reverse and DC Blocking Voltage

SDR3KHF

SDR3MHF

SDR3NHF

800

1000

1200

Volts

Average Rectified Forward Current

Io

3.0

Amps

Peak Surge Current

70

Amps

Operating & Storage Temperature

-65 to +175

ºC

Maximum Thermal Resistance

Junction to Leads, L = 1/4"

Junction to Tabs

16

12

ºC/W

1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.

Axial Lead Diode

SMS

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0097B

DOC