TSM1NB60CPROG datasheet(2/7 Pages) TSC

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TSM1NB60

Taiwan Semiconductor

Document Number: DS_P0000038

Version: B15

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 5)

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

600

Drain-Source On-State Resistance

VGS = 10V, ID = 0.5A

RDS(ON)

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

2.5

3.5

4.5

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

IDSS

µA

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Forward Transfer Conductance

VDS = 10V, ID = 0.5A

gfs

0.8

Dynamic

(Note 6)

Total Gate Charge

VDS = 480V, ID = 1A,

VGS = 10V

6.1

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

3.3

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

138

Output Capacitance

Coss

17.1

Reverse Transfer Capacitance

Crss

4.2

Gate Resistance

F = 1MHz, open drain

12.5

Ω

Switching

(Note 7)

Turn-On Delay Time

VDD = 300V, RG =25Ω

ID = 1A, VGS = 10V

td(on)

7.7

Turn-On Rise Time

6.8

Turn-Off Delay Time

td(off)

15.3

Turn-Off Fall Time

14.9

Source-Drain Diode

(Note 5)

Diode Forward Voltage

IS = 1A, VGS = 0V

VSD

0.9

1.4

Source Current

Integral reverse diode

In the MOSFET

Source Current (Pulse)

ISM

Notes:

Current limited by package.

Pulse width limited by the maximum junction temperature.

L = 10mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25

oC.

ISD≤1A , VDD≤BVDSS , di/dt≤200A/us , Starting TJ = 25

oC.

Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.

For DESIGN AID ONLY, not subject to production testing.

Switching time is essentially independent of operating temperature.

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