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TSM1NB60CPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM1NB60CPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 7 page  TSM1NB60 Taiwan Semiconductor Document Number: DS_P0000038 1 Version: B15 N-Channel Power MOSFET 600V, 1A, 10Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Low RDS(ON) 8Ω (Typ.) ● Low gate charge typical @ 6.1 nC (Typ.) ● Low Crss typical @4.2pF (Typ.) APPLICATION ● Power Supply ● Lighting ● Charger KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 6.1 nC SOT-223 TO-251 (IPAK) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL IPAK/DPAK SOT-223 UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25°C ID 1 A TC = 100°C 0.7 Pulsed Drain Current (Note 2) IDM 4 A Total Power Dissipation @ TC = 25°C PDTOT 39 2.1 W Single Pulsed Avalanche Energy (Note 3) EAS 5 mJ Single Pulsed Avalanche Current (Note 3) IAS 1 A Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL IPAK/DPAK SOT-223 UNIT Junction to Case Thermal Resistance RӨJC 2.87 -- °C/W Junction to Ambient Thermal Resistance RӨJA 110 60 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. |
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