2DB1386Q/R

Document number: DS31147 Rev. 7 - 2

2 of 6

www.diodes.com

February 2013

© Diodes Incorporated

2DB1386Q/R

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-30

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-6

V

Continuous Collector Current

-5

A

Peak Pulse Current

-10

A

Base Current

-500

mA

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

1

W

Thermal Resistance, Junction to Ambient Air (Note 5)

125

°C/W

Thermal Resistance, Junction to Leads (Note 6)

19

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in steady state condition.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

Thermal Characteristics and Derating Information

0

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

Derating Curve

Temperature (°C)

100µ

1m

10m 100m

1

10

100

1k

0

20

40

60

80

100

120

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100µ

1m

10m 100m

1

10

100

1k

1

10

100

Single Pulse. T

Pulse Power Dissipation

Pulse Width (s)