2DB1386R-13 datasheet(3/6 Pages) DIODES

3 / 6 page

2DB1386Q/R

Document number: DS31147 Rev. 7 - 2

3 of 6

www.diodes.com

February 2013

2DB1386Q/R

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Conditions

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage

BVCBO

-30



IC = -50µA, IE = 0

Collector-Emitter Breakdown Voltage

BVCEO

-20



IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

-6



IE = -50µA, IC = 0

Collector Cut-Off Current

ICBO



-0.5

A

VCB = -20V, IE = 0

Emitter Cut-Off Current

IEBO



-0.5

A

VEB = -5V, IC = 0

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage

VCE(SAT)



-0.25

-1.0

IC = -4A, IB = -0.1A

DC Current Gain

2DB1386Q

hFE

120



270



IC = -0.5A, VCE = -2V

2DB1386R

180



390

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo



VCB = -20V, IE = 0, f = 1MHz

Current Gain-Bandwidth Product



100



MHz

VCE = -6V, IE = 50mA,

f = 30MHz

Notes:

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

0.001

0.01

0.1

-I , COLLECTOR CURRENT (A)

Figure 1 Typical DC Current Gain

vs. Collector Current (2DB1386Q)

100

150

200

250

T = -55°C

T = 25°C

T = 85°C

T = 150°C

300

350

400

= -2V

-V , COLLECTOR EMITTER VOLTAGE (V)

Figure 2 Typical Collector Current

vs. Collector-Emitter Voltage

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I = -4mA

I = -8mA

I = -6mA

I = -2mA

I = -10mA

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