Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

DMN4800LSSL Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN4800LSSL
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN4800LSSL Datasheet(HTML) 2 Page - Diodes Incorporated

  DMN4800LSSL_15 Datasheet HTML 1Page - Diodes Incorporated DMN4800LSSL_15 Datasheet HTML 2Page - Diodes Incorporated DMN4800LSSL_15 Datasheet HTML 3Page - Diodes Incorporated DMN4800LSSL_15 Datasheet HTML 4Page - Diodes Incorporated DMN4800LSSL_15 Datasheet HTML 5Page - Diodes Incorporated DMN4800LSSL_15 Datasheet HTML 6Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMN4800LSSL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
8.0
6.4
A
Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
6.7
5.3
A
Pulsed Drain Current (Note 6)
IDM
50
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.46
W
Thermal Resistance, Junction to Ambient
RθJA
86
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.8
1.2
1.6
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
11
14
14
20
mΩ
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 7A
Forward Transconductance
gfs
⎯
8
⎯
S
VDS = 10V, ID = 8A
Diode Forward Voltage (Note 7)
VSD
⎯
0.72
0.94
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
798
⎯
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
128
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
122
⎯
pF
Gate Resistance
RG
⎯
1.37
⎯
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
⎯
8.7
⎯
nC
VGS = 5V, VDS = 15V, ID = 9A
Gate-Source Charge
Qgs
⎯
1.7
⎯
Gate-Drain Charge
Qgd
⎯
2.4
⎯
Turn-On Delay Time
td(on)
⎯
5.03
⎯
ns
VDD = 15V, VGEN = 10V,
RL = 15Ω, RG = 6.0Ω, ID = 1A
Rise Time
tr
⎯
4.50
⎯
Turn-Off Delay Time
td(off)
⎯
26.33
⎯
Fall Time
tf
⎯
8.55
⎯
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com