DMN4800LSSL_15 datasheet(4/6 Pages) DIODES

Part #	DMN4800LSSL

Description	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 6 page

DMN4800LSSL

Document number: DS35016 Rev. 4 - 2

4 of 6

www.diodes.com

November 2013

DMN4800LSSL

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25

100 125 150

T , AMBIENT TEMPERATURE (°C)

0.4

0.8

1.2

1.6

I = 250µA

I = 1mA

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

T = 25°C

100

1,000

10,000

Fig. 9 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

Ciss

Crss

Coss

Fig. 10 Total Gate Charge

Q, TOTAL GATE CHARGE (nC)

I = 11.6A

I = 9A

0510

Fig. 11 Typical Leakage Current vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

100

1,000

10,000

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

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