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WFF2N60 Datasheet(PDF) 1 Page - Wisdom technologies Int`l

Part # WFF2N60
Description  600V N-Channel MOSFET
PDF  6 Pages
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Manufacturer  WISDOM [Wisdom technologies Int`l]
Direct Link  http://www.wisdom-technologies.com/index.aspx
Logo WISDOM - Wisdom technologies Int`l

WFF2N60 Datasheet(HTML) 1 Page - Wisdom technologies Int`l

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HIGH VOLTAGE
N-Channel MOSFET 
 
 
   Rev.A0,August , 2010 | 
1 
 
 
 
WFF2N60
 
600V N-Channel MOSFET
Features
□
Low Intrinsic Capacitances 
□
Excellent Switching Characteristics 
TO‐220F  
G‐Gate,D‐Drain,S‐Sourse 
□
Extended Safe Operating Area 
□
Unrivalled Gate Charge :Qg= 8.5nC (Typ.)
□
BVDSS=600V,ID=2A
□
RDS(on) : 5 Ω (Max) @VG=10V
 
□
100% Avalanche Tested
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
Parameter
WFF2N60
Units
VDSS
Drain-Sourse Voltage
600
V
ID
Drain Current
-continuous (Tc=25℃)
2*
A
-continuous (Tc=100℃)
1.5*
A
VGS
Gate-Sourse Voltage
±
30
V
EAS
Single Plused Avanche Energy
(Note1)
120
mJ
IAR
Avalanche Current
(Note2)
2
A
PD
Power Dissipation (Tc=25℃)
23
W
TJ,TSTG
Operating and Storage Temperature Range
-55 ~ +150
℃
TL
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
300
℃
Thermal Characteristics 
Symbol
Parameter
Typ.
Max
Units
RθJC
Thermal Resistance,Junction to Case
--
4.46
℃
/W
RθJA
Thermal Resistance,Junction to Ambient
--
62.5
℃
/W
* Drain current limited by maximum junction temperature.
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