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DMP2012SN Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP2012SN Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() DMP2012SN Document number: DS30790 Rev. 7 - 2 2 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP2012SN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 V Drain Current (Note 5) Steady State ID -0.7 A Pulsed Drain Current (Note 6) IDM -2.8 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient RJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20V, VGS = 0V Gate-Body Leakage IGSS 10 µA VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.5 -1.2 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) 0.23 0.37 0.30 0.50 Ω VGS = -4.5V, ID = -0.4A VGS = -2.5V, ID = -0.4A Forward Transfer Admittance |Yfs| 1.5 S VDS = -10V, ID = -0.4A Diode Forward Voltage (Note 7) VSD -0.8 -1.1 V VGS = 0V, IS = -0.7A DYNAMIC CHARACTERISTICS Input Capacitance Ciss 178.5 pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss 26.3 pF Reverse Transfer Capacitance Crss 18.8 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10.4 ns VDD = -10V, ID = -0.4A, VGS = -5.0V, RGEN = 50Ω Turn-Off Delay Time tD(OFF) 175 ns Turn-On Rise Time tr 22.3 ns Turn-Off Fall Time tf 64 ns Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10µS, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. |
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