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IRF6723M2DPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF6723M2DPBF
Description  Replaces Two Discrete MOSFETs
PDF  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6723M2DPBF Datasheet(HTML) 1 Page - International Rectifier

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1
12/16/09
IRF6723M2DTRPbF
IRF6723M2DTR1PbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline

Typical values (unless otherwise specified)
DirectFET
™ ISOMETRIC
Description
The IRF6723M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.
The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching
losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of
processors operating at higher frequencies.
The IRF6723M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.99mH, RG = 25Ω, IAS = 12A.
Notes:
PD - 97441
G1
G2
S1
S2
S1
S2
SB
M2
M4
MA
L4
L6
L8
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
ID = 15A
TJ = 25°C
TJ = 125°C
Applications
l Dual Common Drain Control MOSFETs for
Multiphase DC-DC Converters
Features
l Replaces Two Discrete MOSFETs
l Optimized for High Frequency Switching
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Compatible with existing Surface Mount
Techniques
l RoHS Compliant and
Halogen Free
l 100% Rg tested
Absolute Maximum Ratings (each die operating consecutively)
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
71
Max.
13
47
130
±20
30
15
12
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
9.4nC
3.3nC
1.2nC
17nC
6.3nC
1.8V
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
0
5
10
15
20
25
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 24V
VDS= 15V
ID= 12A


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