RFSW2100D datasheet(2/11 Pages) RFMD

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RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131029

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

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RFSW2100D

Absolute Maximum Ratings

Parameter

Rating

Unit

Max Control Bias

-60

CW RF Input Power

Storage Temperature Range

-55 to +125

°C

Operating Temperature (Case)

-40 to +85

°C

Operating Junction Temperature (TJ)

250

°C

Human Body Model (based on packaged device)

Class 1A

MTTF @ -40V OFF Control Bias (95% Confidence Limits)*

(TJ < 200°C)**

(TJ < 250°C)**

3.0 x 10

1.0 x 10

Hours

Thermal Resistance, Rth (junction to case)***

(Expected value at TC = 85°C)

10.5

°C/W

Caution! ESD sensitive device.

RFMD Green: RoHS compliant per EU

Directive 2011/65/EU, halogen free per

IEC 61249-2-21, <1000ppm each of

antimony trioxide in polymeric materials

and red phosphorus as a flame retardant,

and <2% antimony solder.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table above.

*MTTF - median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT(random) failure

rate.

**User will need to define this specification in the final application and ensure bias conditions satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and

TC = TCASE to maintain maximum operating junction temperature and MTTF.

***The thermal resistance quoted here (10.5C/W) is the thermal resistance of the GaN-on-SiC die itself, not including the contribution of any particular

attach method. Rth is defined as (TJ – TC) / Power, where TC is measured at the bottom of the SiC.

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating Conditions

OFF Control Bias

-20

-40

ON Control Bias

RF I/O Impedance

Functional Test

RFC-RF1 Insertion Loss

-0.25

Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V

RFC-RF2 Insertion Loss

-0.25

Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V

RFC-RF1 Isolation

-60

Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V

RFC-RF2 Isolation

-60

Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V

RFC-RF1 2

nd Harmonic

-20

dBm

Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V

RFC-RF2 2

nd Harmonic

-20

dBm

Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V

RFC-RF1 3

rd Harmonic

-10

dBm

Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V

RFC-RF2 3

rd Harmonic

-10

dBm

Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V

RFC-RF1 - VC1 Current

250

µA

Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V

RFC-RF2 - VC1 Current

-600

µA

Frequency = 880MHz PIN = 3 0dBm VC1 = -10V VC2 = 0V

RFC-RF1 - VC2 Current

250

µA

Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V

RFC-RF2 - VC2 Current

-600

µA

Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V

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