RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131029

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

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RFSW2100D

55W GaN-on-SiC Reflective SPDT RF Switch

The RFSW2100D is a GaN-on-SiC high power discrete RF switch

designed for military and commercial wireless infrastructure,

industrial/scientific/medical and general purpose broadband RF

control and switching applications. Using an advanced high power

density gallium nitride (GaN) semiconductor process, the

RFSW2100D is able to achieve low insertion loss and high

isolation with better than 10dB return loss across a wide band

from 30MHz to 6GHz with proper die attach and heat sinking. The

RFSW2100D is an SPDT RF switch suitable for many applications

with 55W CW input power compression capability under controlled

well as 0.34dB insertion loss, and 37dB small signal isolation at

2GHz.

Functional Block Diagram

Ordering Information

RFSW2100D

55W GaN on SiC RF Switch

Package: Bare Die 1mm x 0.8mm

Features

■

Broadband Operation 30MHz to

6GHz

■

Advanced GaN HEMT Technology

■

2GHz Typical Performance



Insertion Loss: 0.34dB



Isolation: 37dB



■

Small Form Factor



1 x 0.8mm

■

High Power Capability



■

Designed to Present 50

Ω I/O

■

Hot Switching Capable

Applications

■

Military Communicaiton

■

Electronic Warfare

■

Commercial Wireless Infrastructure

■

Cellular and WiMAX Infrastructure

■

Civilian and Military Radar

■

General Purpose Broadband

Amplifiers

■

Public Mobile Radios

■

Industrial, Scientific, and Medical

RFSW2100D

RFSW2100D