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IRF7811AVPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7811AVPBF
Description  N-Channel Application-Specific MOSFETs
PDF  6 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7811AVPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF7811AVPbF
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Q
oss
… Typical values of RDS(on) measured at V
GS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A.
† Rθ is measured at TJ approximately 90°C
Electrical Characteristics
Parameter
Symbol Min
Typ
Max Units
Drain-to-Source Breakdown Voltage
V(BR)DSS
30
–––
–––
V
Static Drain-to-Source On-Resistance
RDS(on)
–––
11
14
m
Gate Threshold Voltage
VGS(th)
1.0
–––
3.0
V
–––
–––
50
µA
–––
–––
20
µA
–––
–––
100
mA
Gate-to-Source Leakage Current
IGSS
–––
––– ±100
nA
Total Gate Charge, Control FET
Qg
–––
17
26
nC
Total Gate Charge, Synch FET
Qg
–––
14
21
VGS = 5.0V, VDS < 100mV
Pre-Vth Gate-to-Source Charge
Qgs1
–––
3.4
–––
Post-Vth Gate-to-Source Charge
Qgs2
–––
1.6
–––
Gate-to-Drain ("Miller") Charge
Qgd
–––
5.1
–––
Switch Charge (Qgs2 + Qgd)QSW
–––
6.7
–––
Output Charge
QOSS
–––
8.1
12
VDS = 16V, VGS = 0
Gate Resistance
RG
0.5
–––
4.4
Turn-On Delay Time
td(on)
–––
8.6
–––
ns
Rise Time
tr
–––
21
–––
Turn-Off Delay Time
td(off)
–––
43
–––
Fall Time
tf
–––
10
–––
Input Capacitance
Ciss
–––
1801 –––
pF
Output Capacitance
Coss
–––
723
–––
Reverse Transfer Capacitance
Crss
–––
46
–––
Diode Characteristics
Parameter
Symbol Min
Typ
Max Units
Diode Forward Voltage
VSD
–––
–––
1.3
V
Reverse Recovery Charge
(with Parallel Schottsky)
f
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ± 20V
VDS = 24V, ID = 15A, VGS = 5.0V
VDS = 24V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A
d
di/dt = 700A/µs , (with 10BQ040)
VDD = 16V, VGS = 0V, ID = 15A
VGS = 5.0V
VDD = 16V
ID = 15A
Clamped Inductive Load
di/dt = 700A/µs
VDD = 16V, VGS = 0V, ID = 15A
TJ = 25°C, IS = 15A
d ,V
GS = 0V
VDS = 24V, VGS = 0V, TJ = 100°C
VGS = 0V
VDS = 10V
Conditions
Drain-to-Source Leakage Current
IDSS
VDS = 16V, ID = 15A
Qrr
–––
43
–––
nC
nC
–––
50
–––
Qrr
Reverse Recovery Charge
f



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