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IRF7811AVPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7811AVPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 6 page  www.irf.com 1 IRF7811AVPbF • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% R G Tested • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Q sw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. DEVICE CHARACTERISTICS Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A IRF7811AVPbF SO-8 08/17/04 PD-95265 IRF7811AV RDS(on) 11 m Ω QG 17 nC QSW 6.7 nC QOSS 8.1 nC Absolute Maximum Ratings Symbol Units VDS V VGS Continuous Output Current TA = 25°C A (VGS ≥ 4.5V) TL = 90°C IDM TA = 25°C TL = 90°C TJ , TSTG °C IS ISM Thermal Resistance Symbol Typ Max Units RθJA ––– 50 RθJL ––– 20 W A °C/W Maximum Junction-to-Ambient eh Maximum Junction-to-Lead hà Pulsed Source Current 2.5 50 2.5 -55 to 150 ID PD Power Dissipation eÃÃÃÃÃÃÃÃÃà Continuous Source Current (Body Diode) Parameter Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Junction & Storage Temperature Range 3.0 IRF7811AV 10.8 100 30 ±20 11.8 |
Similar Part No. - IRF7811AVPBF_15 |
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Similar Description - IRF7811AVPBF_15 |
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