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LP28007 Datasheet(PDF) 8 Page - Lowpower Semiconductor inc

Part # LP28007
Description  Internal Integrate P-MOSFETs
PDF  11 Pages
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Manufacturer  POWER [Lowpower Semiconductor inc]
Direct Link  http://www.lowpowersemi.com
Logo POWER - Lowpower Semiconductor inc

LP28007 Datasheet(HTML) 8 Page - Lowpower Semiconductor inc

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Preliminary Datasheet
LP28007
LP28007 – 02
May.-2013
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 8 of 11
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may remain possibility to affect device reliability.
Note 2. θJA Is measured in the natural convection at TA=25℃ on a high effective thermal conductivity test
board 4 layers,1S of JEDEC 51-7 thermal measurement standard. The case point of θJc is on the
expose pad for the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
VSET VS. Temperature (VBATT > 5.8V)
VSET VS. Temperature (VBATT < 5.8V)
Charge Current VS.Battery Voltage(VIN=10V)
Charge Current VS.VIN(VBATT=8.0V)
Regulated Output Voltage vs.Supply Voltage
Regulated Output Voltage vs.Temperature
Rset=3k



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