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IRFR7446PBF Datasheet(PDF) 3 Page - International Rectifier |
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IRFR7446PBF Datasheet(HTML) 3 Page - International Rectifier |
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3 / 11 page ![]() IRFR7446PbF 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 S D G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 170 ––– ––– S Qg Total Gate Charge ––– 65 130 nC Qgs Gate-to-Source Charge ––– 18 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 22 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 43 ––– td(on) Turn-On Delay Time ––– 9.8 ––– ns tr Rise Time ––– 13 ––– td(off) Turn-Off Delay Time ––– 32 ––– tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 3150 ––– pF Coss Output Capacitance ––– 480 ––– Crss Reverse Transfer Capacitance ––– 330 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 570 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 680 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 120 A (Body Diode) ISM Pulsed Source Current ––– ––– 480 A (Body Diode) Ãd VSD Diode Forward Voltage ––– 0.9 1.3 V dv/dt Peak Diode Recovery f ––– 4.8 ––– V/ns trr Reverse Recovery Time ––– 20 ––– ns TJ = 25°C VR = 34V, ––– 21 ––– TJ = 125°C IF = 56A Qrr Reverse Recovery Charge ––– 13 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 13 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.8 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) * TJ = 25°C, IS = 56A, VGS = 0V Conditions VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V i See Fig. 12 VGS = 0V, VDS = 0V to 32V h VGS = 10VÃg VDD = 20V ID = 56A, VDS =0V, VGS = 10V TJ = 175°C, IS = 56A, VDS = 40V g integral reverse p-n junction diode. MOSFET symbol showing the ID = 30A RG = 2.7Ω Conditions VDS = 10V, ID = 56A ID =56A VDS =20V |
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