UF9Z24L-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UF9Z24

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-A18.C



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-55

Drain-Source Leakage Current

IDSS

VDS=-55V, VGS=0V

-25

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V

+100

Reverse

VGS=-20V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-2.0

-4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-12A (Note 1)

0.175

Ω

On State Drain Current (Note 1)

ID(ON)

VGS=-10V, VDS=-5V

-12

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

(Note 2)

350

Output Capacitance

COSS

170

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VGS=-10V, VDS=-44V,

ID=-7.2A (Note 3)

Gate to Source Charge

QGS

6.6

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=-28V, ID=-7.2A, RG=24Ω

, RD=3.7Ω (Note 3)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

(Note 2)

Maximum Body-Diode Continuous Current

-12

Maximum Body-Diode Pulsed Current

ISM

-48

Drain-Source Diode Forward Voltage

VSD

IF=-12A, VGS=0V (Note 1)

-1.6

Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

2. Guaranteed by design, not subject to production testing.

3. Independent of operating temperature.

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