2SK508G-X-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SK508

N-CHANNEL JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-101.C



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Gate to Drain Voltage

VGDO

-15

Gate to Source Voltage

VGSO

-15

Drain to Source Voltage (VGS=-4.0 V)

VDSX

Drain Current (DC)

Gate Current (DC)

Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Gate Cut-Off Current

IGSS

VGS=-10V, VDS=0V

-1.0

Zero Gate Voltage Drain Current (Note)

IDSS

VDS=5.0V, VGS=0V

Gate to Source Cut-Off Voltage

VGS(off)

VDS=5.0V, ID=10μA

-0.6

-1.4

-3.5

Forward Transfer Admittance (Note)

|yFS|1

VDS=5.0V, ID=10mA, f=1.0kHz

|yFS|2

VDS=5.0V, VGS=0V, f=1.0kHz

Input Capacitance

CISS

VDS=5.0V, ID=10mA, f=1.0MHz

4.8

Feedback Capacitance

CRSS

VDS=5.0V, ID=10mA, f=1.0MHz

1.6

Note: Pulsed: PW≤1ms, Duty Cycle≤1%.



IDSS CLASSIFICATION

MARKING

K51

K52

K53

IDSS (mA)

10 ~ 20

15 ~ 30

25 ~ 50

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