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UT3N01ZG-AE2-R Datasheet(PDF) 5 Page - Unisonic Technologies

Part # UT3N01ZG-AE2-R
Description  N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3N01ZG-AE2-R Datasheet(HTML) 5 Page - Unisonic Technologies

  UT3N01ZG-AE2-R Datasheet HTML 1Page - Unisonic Technologies UT3N01ZG-AE2-R Datasheet HTML 2Page - Unisonic Technologies UT3N01ZG-AE2-R Datasheet HTML 3Page - Unisonic Technologies UT3N01ZG-AE2-R Datasheet HTML 4Page - Unisonic Technologies UT3N01ZG-AE2-R Datasheet HTML 5Page - Unisonic Technologies UT3N01ZG-AE2-R Datasheet HTML 6Page - Unisonic Technologies  
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UT3N01Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
5 of 6
www.unisonic.com.tw
QW-R502-285.I
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
0
Drain-Source Breakdown Voltage,
BVDSS(V)
10
0
0.2
0
0
50
Drain Current vs.
Gate Threshold Voltage
Gate Threshold Voltage, VTH (V)
0.6
0.8
100
150
200
250
300
20
0
60
0
80
0
100
0
120
0
1.2
20
30
40
50
60
40
0
0.4
1.0
0
Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage, VSD (V)
0
0.2
0
Drain-Source On-State
Resistance Characteristics
Drain to Source Voltage, VDS (mV)
0
0.4
0.6
0.8
1.0
20
40
60
80
100
120
140
160
50
100
150
200
20
40
60
80
100
VGS=4V
ID=80mA
VGS=2.5V
ID=40mA
VGS=1.5V
ID=10mA
1ms
0.5
0.01
1
510 15 25 35
0.02
0.05
0.1
0.2
1
0.5
RD
S(
ON
) L
IM
IT
VGS=2.7V
Single Pulse
SOT-23
Drain to Source Voltage, VDS (V)
Drain Current vs. Drain to Source
Voltage
Single Pulse Time (sec)
0.001 0.01
100 300
0
0.1
1
10
1
2
3
4
5
Power vs. Single Pulse Time



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