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IPB240N03S4L-R9 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPB240N03S4L-R9 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  IPB240N03S4L-R9 OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V 1) 240 A T C=100 °C, V GS=10 V 2) 240 Pulsed drain current 2) I D,pulse T C=25 °C 960 Avalanche energy, single pulse E AS I D=120 A 750 mJ Avalanche current, single pulse I AS - 190 A Gate source voltage V GS ±16 V Power dissipation P tot T C=25 °C 231 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 30 V R DS(on) 0.92 m W I D 240 A Product Summary PG-TO263-7-3 Type Package Marking IPB240N03S4L-R9 PG-TO263-7-3 4N03LR9 Rev. 1.1 page 1 2014-04-28 |
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Similar Description - IPB240N03S4L-R9 |
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