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UZ0103G-8-AA3-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UZ0103G-8-AA3-R
Description  1A TRIAC
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UZ0103G-8-AA3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UZ0103
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R401-037.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
UZ0103-6
600
V
Repetitive Peak Off-State Voltage
UZ0103-8
VDRM
800
V
UZ0103-6
600
V
Repetitive Peak Reverse Voltage
UZ0103-8
VRRM
800
V
RMS On-State Current (full sine wave)
TL=50°C
IT(RMS)
1
A
F=50Hz, t=20ms
8
A
Non Repetitive Surge Peak On-State
Current (full cycle, TJ initial=25°C)
F=60Hz, t=16.7ms
ITSM
8.5
A
I
2t Value for Fusing
tp=10ms
I
2t
0.35
A
2s
Critical Rate of Rise of On-State Current:
IG=2*IGT, tr≤100ns
F=120Hz, TJ=125°C
dI/dt
20
A/µs
Peak Gate Current
tp=20µs, TJ=125°C
IGM
1
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
TO-92
150
°C/W
Junction to Ambient
SOT-223
θJA
60
°C/W
TO-92
60
°C/W
Junction to Case
SOT-223
θJC
25
°C/W
Note: S=Copper surface under tab
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
QUADRANT
MIN
TYP MAX UNIT
TJ=25°C
5
µA
Repetitive Peak Off-State or
Reverse Current
IDRM, IRRM
VDRM=VRRM
TJ=125°C
0.5
mA
I-II-III
3
mA
Gate Trigger Current (Note 1)
IGT
IV
5
mA
Gate Trigger Voltage
VGT
VD=12V, RL=30Ω
ALL
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
TJ=125°C
ALL
0.2
V
Holding Current (Note 2)
IH
IT=50mA
7
mA
I-III-IV
7
mA
Latching Current
IL
IG=1.2IGT
II
15
mA
Rise of Off-State Voltage (Note 2)
dVD/dt
VD=67%VDRM, Gate Open, TJ=110°C
10
V/µs
Rise of Off-State Voltage at
Commutation (Note 2)
(dVCOM/dt)c (dI/dt)c=0.44A/ms, TJ=110°C
0.5
V/µs
On-State Voltage (Note 2)
VTM
ITM=1.4 A, tp=380µs, TJ=25°C
1.56
V
Dynamic Resistance (Note 2)
RD
Dynamic resistance, TJ=125°C
400
mΩ
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.



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