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SIR802DP Datasheet(PDF) 1 Page - Vishay Telefunken |
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SIR802DP Datasheet(HTML) 1 Page - Vishay Telefunken |
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1 / 13 page  Vishay Siliconix SiR802DP New Product Document Number: 65671 S10-0217-Rev. A, 25-Jan-10 www.vishay.com 1 N-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC • Low Voltage Drive • POL PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 20 0.005 at VGS = 10 V 30 15.5 nC 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Ordering Information: SiR802DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View N-Channel MOSFET G D S Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 30a A TC = 70 °C 30a TA = 25 °C 22.6b, c TA = 70 °C 18.2b, c Pulsed Drain Current IDM 70 Continuous Source-Drain Diode Current TC = 25 °C IS 25a TA = 25 °C 4.1b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 27.7 W TC = 70 °C 17.7 TA = 25 °C 4.6b, c TA = 70 °C 3.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 22 27 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 3.5 4.5 |
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