SIR802DP datasheet(4/13 Pages) TFUNK

4 / 13 page

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Document Number: 65671

S10-0217-Rev. A, 25-Jan-10

Vishay Siliconix

SiR802DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

- 0.7

- 0.5

- 0.3

- 0.1

0.1

0.3

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.005

0.010

0.015

0.020

0.025

012

345

910

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =10A

120

150

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

Limited byRDS(on)*

10 s

BVDSS

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