BSN012N03LSI datasheet(2/9 Pages) INFINEON

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BSN012N03LSI

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

T A=25 °C,

R thJA=50 K/W

2.5

Operating and storage temperature

T j, T stg

-55 ... 150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

bottom

1.6

K/W

top

Device on PCB

R thJA

6 cm

2 cooling area2)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Breakdown voltage temperature

coefficient

(BR)DSS

/dT j

I D=10 mA, referenced

to 25 °C

mV/K

Gate threshold voltage

V GS(th)

V DS=V GS, I D=250 µA

1.2

Zero gate voltage drain current

I DSS

V DS=20 V, V GS=0 V,

T j=25 °C

0.5

V DS=20 V, V GS=0 V,

T j=125 °C

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=30 A

1.3

1.6

V GS=10 V, I D=30 A

1.0

1.2

Gate resistance

R G

0.3

0.5

1.0

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

160

Value

Values

3) See figure 3 for more detailed information

Rev. 2.0

page 2

2014-05-23

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