80112 TKIM/83111PE TKIM TC-00002622 No.9010-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

ECH8656

N-Channel Power MOSFET

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

ON-resistance RDS(on)1=13mΩ (typ.)

•

1.8V drive

•

Halogen free compliance

•

Nch + Nch MOSFET

•

Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

20

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

7.5

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

40

A

Allowable Power Dissipation

PD

1.3

W

Total Dissipation

PT

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7011A-001

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

Ordering number : EN9010A

8765

1234

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

ECH8

1

4

85

0.15

0 to 0.02

0.65

2.9

0.3

Top View

Bottom View

TL

ECH8656-TL-H

TB

Lot No.