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ECH8656 Datasheet(PDF) 4 Page - ON Semiconductor |
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ECH8656 Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() ECH8656 No.9010-4/7 Total Gate Charge, Qg -- nC VGS -- Qg 012 3 4 5 6 7 8 9 10 11 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 IT12491 VDS=10V ID=7.5A IT16507 A S O Drain-to-Source Voltage, VDS -- V 0.01 0.1 1.0 10 23 5 7 23 5 7 23 5 7 23 5 100 7 0.01 0.1 1.0 10 100 7 5 7 5 3 2 7 5 3 2 7 5 3 2 3 2 IDP=40A (PW≤10μs) ID=7.5A 100ms 1ms 10ms 100 μs Operation in this area is limited by RDS(on). DC operation (T a=25 °C ) Ta=25 °C Single pulse When mounted on ceramic substrate (900mm2 ×0.8mm) 1unit IT16508 Ambient Temperature, Ta -- °C PD -- Ta 0 20 40 60 80 100 120 140 160 0 0.6 0.8 0.2 0.4 1.0 1.5 1.4 1.3 1.2 1.6 1unit When mounted on ceramic substrate (900mm2 ×0.8mm) Total dissipation |
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