NTLJS3A18PZ datasheet(1/6 Pages) ONSEMI

Part #	NTLJS3A18PZ

Description	Single P?묬hannel Power MOSFET

PDF	6 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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1 / 6 page

November, 2012 − Rev. 0

1

Publication Order Number:

NTLJS3A18PZ/D

NTLJS3A18PZ

Power MOSFET

−20 V, −8.2 A, mCoolt Single P−Channel,

2.0x2.0x0.8 mm WDFN Package

Features

• WDFN Package with Exposed Drain Pads for Excellent Thermal

Conduction

• Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space Saving

• Ultra Low RDS(on)

• ESD Diode−Protected Gate

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Optimized for Power Management Applications for Portable

Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and

Others

• Battery Switch

• High Side Load Switch

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

−8.2

A

TA = 85°C

−5.9

t ≤ 5 s

TA = 25°C

−11.2

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.8

W

t ≤ 5 s

3.4

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

−5.0

A

TA = 85°C

−3.6

Power Dissipation

(Note 2)

TA = 25°C

PD

0.7

W

Pulsed Drain Current

tp = 10 ms

IDM

−40

A

Operating Junction and Storage Temperature

TJ, TSTG

−55 to

150

°C

ESD (HBM, JESD22−A114)

VESD

2000

V

Source Current (Body Diode) (Note 2)

IS

−1.1

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size,

(30 mm2, 2 oz Cu).

http://onsemi.com

−20 V

25 mW @ −2.5 V

18 mW @ −4.5 V

RDS(on) MAX

−8.2 A

ID MAX

V(BR)DSS

50 mW @ −1.8 V

90 mW @ −1.5 V

G

S

P−CHANNEL MOSFET

D

AC = Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

ACMG

G

1

2

3

6

5

4

WDFN6

CASE 506AP

MARKING

DIAGRAM

Device

Package

Shipping†

ORDERING INFORMATION

NTLJS3A18PZTWG

WDFN6

(Pb−Free)

10000/Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

PIN CONNECTIONS

S

D

Pin 1

NTLJS3A18PZTXG

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