NTMFS4833NS

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

1.45

°C/W

Junction−to−Ambient – Steady State (Note 3)

54

Junction−to−Ambient – Steady State (Note )

138.7

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

30

mV/°C

Zero Gate Voltage Drain Current

1

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature Coefficient

6.8

mV/°C

Drain−to−Source On Resistance

1.4

2.2

mW

1.3

2.3

3.4

2.3

Forward Transconductance

100

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

5250

pF

Output Capacitance

1080

Reverse Transfer Capacitance

500

Total Gate Charge

36

63

nC

Threshold Gate Charge

3.8

Gate−to−Source Charge

15

Gate−to−Drain Charge

13

Total Gate Charge

86

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

21

ns

Rise Time

60

Turn−Off Delay Time

37

Fall Time

44

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

7. With 0V potential from sense lead to source lead, i.e. using a virtual ground.