NCP45540IMNTWG.H datasheet(2/13 Pages) ONSEMI

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NCP45540

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Table 1. PIN DESCRIPTION

Name

Function

1, 13

VIN

Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 13

NCP45540−H − Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to

GND

NCP45540−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC

VCC

Supply voltage to controller (3.0 V − 5.5 V)

GND

Controller ground

Slew rate adjustment; float if not used

Active−high, open−drain output that indicates when the gate of the MOSFET is fully driven, external pull up

resistor

≥ 1 kW to an external voltage source required; tie to GND if not used.

BLEED

Load bleed connection, must be tied to VOUT either directly or through a resistor

≤ 1 kW

No connect, internally floating but pin may be tied to VOUT

9−12

VOUT

Source of MOSFET connected to load

Table 2. ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Supply Voltage Range

VCC

−0.3 to 6

Input Voltage Range

VIN

−0.3 to 18

Output Voltage Range

VOUT

−0.3 to 18

EN Digital Input Range

VEN

−0.3 to (VCC + 0.3)

PG Output Voltage Range (Note 1)

VPG

−0.3 to 6

Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)

RθJA

30.9

°C/W

Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)

RθJA

51.3

°C/W

Thermal Resistance, Junction−to−Case (VIN Paddle)

RθJC

3.5

°C/W

Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4)

IMAX

Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4)

IMAX

15.5

Total Power Dissipation @ TA = 25°C (Note 2)

Derate above TA = 25°C

3.24

32.4

mW/

°C

Total Power Dissipation @ TA = 25°C (Note 3)

Derate above TA = 25°C

1.95

19.5

mW/

°C

Storage Temperature Range

TSTG

−40 to 150

°C

Lead Temperature, Soldering (10 sec.)

TSLD

260

°C

ESD Capability, Human Body Model (Notes 5 and 6)

ESDHBM

3.0

ESD Capability, Charged Device Model (Note 5)

ESDCDM

1.0

Latch−up Current Immunity (Notes 5 and 6)

100

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. PG is an open−drain output that requires an external pull up resistor

≥ 1 kW to an external voltage source.

2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.

4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably.

5. Tested by the following methods @ TA = 25°C:

ESD Human Body Model tested per JESD22−A114

ESD Charged Device Model per ESD STM5.3.1

Latch−up Current tested per JESD78

6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance

for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.

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