NCP45540IMNTWG.H datasheet(3/13 Pages) ONSEMI

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NCP45540

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Table 3. OPERATING RANGES

Rating

Symbol

Min

Max

Unit

Supply Voltage

VCC

5.5

Input Voltage

VIN

0.5

13.5

Ground

GND

Ambient Temperature

−40

°C

Junction Temperature

−40

125

°C

Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Conditions (Note 7)

Symbol

Min

Typ

Max

Unit

MOSFET

On−Resistance

VCC = 3.3 V; VIN = 1.8 V

RON

3.3

4.5

VCC = 3.3 V; VIN = 5 V

3.6

4.9

VCC = 3.3 V; VIN = 12 V

4.8

7.7

Leakage Current (Note 8)

VEN = 0 V; VIN = 13.5 V

ILEAK

0.1

1.0

CONTROLLER

Supply Standby Current (Note 9)

VEN = 0 V; VCC = 3 V

ISTBY

0.65

2.0

VEN = 0 V; VCC = 5.5 V

3.2

4.5

Supply Dynamic Current (Note 10)

VEN = VCC = 3 V; VIN = 12 V

IDYN

280

400

VEN = VCC = 5.5 V; VIN = 1.8 V

530

750

Bleed Resistance

VEN = 0 V; VCC = 3 V

RBLEED

115

144

VEN = 0 V; VCC = 5.5 V

121

Bleed Pin Leakage Current

VEN = VCC = 3 V, VIN = 1.8 V

IBLEED

6.0

VEN = VCC = 3 V, VIN = 12 V

EN Input High Voltage

VCC = 3 V − 5.5 V

VIH

2.0

EN Input Low Voltage

VCC = 3 V − 5.5 V

VIL

0.8

EN Input Leakage Current

NCP45540−H; VEN = 0 V

IIL

500

NCP45540−L; VEN = VCC

IIH

500

EN Pull Down Resistance

NCP45540−H

RPD

100

124

EN Pull Up Resistance

NCP45540−L

RPU

100

124

PG Output Low Voltage (Note 11)

VCC = 3 V; ISINK = 5 mA

VOL

0.2

PG Output Leakage Current (Note 12)

VCC = 3 V; VTERM = 3.3 V

IOH

5.0

100

Slew Rate Control Constant (Note 13)

VCC = 3 V

KSR

FAULT PROTECTIONS

Thermal Shutdown Threshold (Note 14)

VCC = 3 V − 5.5 V

TSDT

145

°C

Thermal Shutdown Hysteresis (Note 14)

VCC = 3 V − 5.5 V

THYS

°C

VIN Undervoltage Lockout Threshold

VCC = 3 V

VUVLO

0.25

0.35

0.45

VIN Undervoltage Lockout Hysteresis

VCC = 3 V

VHYS

Short−Circuit Protection Threshold

VCC = 3 V; VIN = 0.5 V

VSC

200

265

350

VCC = 3 V; VIN = 13.5 V

100

285

500

7. VEN shown only for NCP45540−H, (EN Active−High) unless otherwise specified.

8. Average current from VIN to VOUT with MOSFET turned off.

9. Average current from VCC to GND with MOSFET turned off.

10. Average current from VCC to GND after charge up time of MOSFET.

11. PG is an open-drain output that is pulled low when the MOSFET is disabled.

12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor

≥ 1 kW to

an external voltage source, VTERM.

13. See Applications Information section for details on how to adjust the slew rate.

14. Operation above TJ = 125°C is not guaranteed.

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