SBR is a registered trademark of Diodes Incorporated.

DFBR030U3LP

Document number: DS35994 Rev. 8 - 2

2 of 8

www.diodes.com

June 2015

© Diodes Incorporated

DFBR030U3LP

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

30

V

RMS Reverse Voltage

21

V

Average Rectified Output Current (See Figure 1)

3.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

20

A

Maximum Ratings

Characteristic

Symbol

Value

Units

Input Voltage Between Two MOSFET Drain

30

V

Drain-Source Voltage

30

V

Gate-Source Voltage

20

V

Drain Current (Note 5)

3.2

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

500

mW

Thermal Resistance, Junction to Ambient Air (Note 5)

250

°C/W

Power Dissipation (Note 6)

1000

mW

Thermal Resistance, Junction to Ambient Air (Note 6)

125

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

30

—

—

V

Forward Voltage Drop

—

0.25

0.278

V

—

0.33

0.37

—

0.36

0.42

—

0.24

0.27

—

0.33

0.36

—

0.35

0.40

Leakage Current (Note 7)

—

50

150

µA

—

100

400

µA

—

6

15

mA

—

10

20

mA

Notes:

5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Part mounted on FR-4 board with 1-in sq pad layout, 2oz Cu.

7. Short duration pulse test used to minimize self-heating effect. Pulse width

≤ 300μs, duty cycle ≤ 2%.