DFBR030U3LP datasheet(3/8 Pages) DIODES

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SBR is a registered trademark of Diodes Incorporated.

DFBR030U3LP

Document number: DS35994 Rev. 8 - 2

3 of 8

www.diodes.com

June 2015

DFBR030U3LP

Electrical Characteristics

– Q1, Q2 (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



220

µA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS



200

µA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)



2.2

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



Ω

VGS = 10V, ID = 2.0A

VGS = 10V, ID = 3.2A

VGS = 4.5V, ID = 2.0A

VGS = 4.5V, ID = 3.2A

Forward Transconductance

gfs



VDS =15V, ID = 2.0A

Diode Forward Voltage (Note 7)

VSD

0.5



1.2

VGS = 0V, IS = 2.25A

Electrical Characteristics

– DFBR030U3LP (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Rectifying Forward Voltage (Note 7)

Vfd2



0.45

0.56

Input voltage VLL = ±5V;

The output current of Rectifier

IOUT = 2A

Rectifier leakage current

Ileak



1000

µA

Input voltage VLL = 16V;

No Load on the Rectifier output

Rectifier Reverse leakage current

Irleak



1000

µA

Input voltage VLL = 0V;

The output voltage of the

Rectifier VOUT = 5V

Note:

7. Short duration pulse test used to minimize self-heating effect.

Pulse width ≤ 300μs, duty cycle ≤ 2%.

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