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STD28P3LLH6AG Datasheet(PDF) 3 Page - STMicroelectronics |
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STD28P3LLH6AG Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STD28P3LLH6AG Electrical ratings DocID028397 Rev 1 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -30 V VGS Gate-source voltage ±18 V ID (1) Drain current (continuous) at Tcase = 25 °C -12 A Drain current (continuous) at Tcase = 100 °C IDM (2) Drain current (pulsed) -48 A PTOT Total dissipation at Tcase = 25 °C 33 W EAS (3) Single pulse avalanche energy 210 mJ Tstg Storage temperature –55 to 150 °C Tj Maximum operating junction temperature 150 °C Notes: (1) Limited by wire bonding (2) Pulse width is limited by safe operating area. (3) starting Tj = 25 °C, IAS =-6 A, VDD = -25 V, Vgs = -10 V . Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 3.75 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board |
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