STF26N60M2 datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

STF26N60M2, STFI26N60M2

Electrical ratings

DocID027600 Rev 2

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM

(2)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt

(3)

Peak diode recovery voltage slope

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

2.5

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width is limited by safe operating area.

(3)

ISD

≤ 20 A, di/dt=400 A/μs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.

(4)

VDS

≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

(1)

Avalanche current, repetitive or not repetitive

3.8

EAR

(2)

Single pulse avalanche energy

250

Notes:

(1)

Pulse width limited by Tjmax.

(2)

starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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