STL92N10F7AG datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STL92N10F7AG

4/16

DocID027022 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS = 0

100

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 100 V

µA

VDS = 100 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2.5

3.5

4.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 8 A

0.008

0.0095

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

3100

Coss

Output capacitance

700

Crss

Reverse transfer

capacitance

-45

Total gate charge

VDD = 50 V, ID = 16 A,

VGS = 10 V

(see Figure 14)

-45

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 8 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15 and Figure 18)

-19

Rise time

td(off)

Turn-off delay time

Fall time

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