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STL4N80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL4N80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. May 2015 DocID025574 Rev 2 1/17 STL4N80K5 N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Figure 1. Internal schematic diagram Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on- resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. AM15540v1 5 6 7 8 12 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) PowerFLAT™ 5x6 VHV 1 2 3 4 Order code VDS RDS(on)max. ID STL4N80K5 800 V 2.5 Ω 2.5 A Table 1. Device summary Order code Marking Package Packaging STL4N80K5 4N80K5 PowerFLAT™ 5x6 VHV Tape and reel www.st.com |
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